Datasheet Details
| Part number | BS616LV2018 |
|---|---|
| Manufacturer | Brilliance Semiconductor |
| File Size | 220.05 KB |
| Description | Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
| Download | BS616LV2018 Download (PDF) |
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Overview: BSI .
| Part number | BS616LV2018 |
|---|---|
| Manufacturer | Brilliance Semiconductor |
| File Size | 220.05 KB |
| Description | Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
| Download | BS616LV2018 Download (PDF) |
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BS616LV2018 • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 16mA (Max.) operating current I -grade: 20mA (Max.) operating current 0.1uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options • I/O Configuration x8/x16 selectable by LB and UB pin The BS616LV2018 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.4V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power
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| Part Number | Description |
|---|---|
| BS616LV2010 | Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
| BS616LV2011 | Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
| BS616LV2012 | Very Low Power/Voltage CMOS SRAM |
| BS616LV2013 | Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
| BS616LV2015 | Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
| BS616LV2016 | Very Low Power CMOS SRAM |
| BS616LV2020 | Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
| BS616LV2021 | Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
| BS616LV2023 | Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
| BS616LV2025 | Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |