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BS616LV2011 - Very Low Power/Voltage CMOS SRAM 128K X 16 bit

General Description

BS616LV2011 Very low operation voltage : 2.4 ~ 5.5V Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 40mA (Max.) operating current I -grade: 45mA (Max.) op

Key Features

  • S Very Low Power/Voltage CMOS SRAM 128K X 16 bit.

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Datasheet Details

Part number BS616LV2011
Manufacturer Brilliance Semiconductor
File Size 237.09 KB
Description Very Low Power/Voltage CMOS SRAM 128K X 16 bit
Datasheet download datasheet BS616LV2011 Datasheet

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BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K X 16 bit „ DESCRIPTION BS616LV2011 • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 40mA (Max.) operating current I -grade: 45mA (Max.) operating current 0.6uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options • I/O Configuration x8/x16 selectable by LB and UB pin SPEED ( ns ) Vcc= 3.