BS616LV2011 Datasheet | Brilliance Semiconductor

- Features Very Low Power/Voltage CMOS SRAM 128K X 16 bit - DESCRIPTION - Very low operation voltage : 2.4 ~ 5.5V - Very low power consumption : Vcc = 3.0V C-grade: 20m A (Max.) operating current I-grade: 25m A (Max.) operating current 0.1u A (Typ.) CMOS standby current Vcc = 5.0V C-grade: 40m A (Max.) operating current I -grade: 45m A (Max.) operating current 0.6u A (Typ.) CMOS standby current - High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V - Automatic power down when chip is deselected - Three state outputs and TTL patible - Fully static operation - Data retention supply voltage as low as 1.5V - Easy expansion with CE and OE options - I/O Configuration x8/x16 selectable by LB and UB pin SPEED ( ns ) Vcc= 3.0V The BS616LV2011 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power Features with a typical CMOS standby current of 0.1u A and maximum access time of 70/100ns in 3V operation. Easy memory expansion is provided by an active LOW chip enable(CE), active LOW output enable(OE) and three-state output drivers. The BS616LV2011 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV2011 is available in DICE form, JEDEC standard 44-pin TSOP Type II package , JEDEC standard 48-pin TSOP Type I package and 48-ball BGA package. - PRODUCT FAMILY PRODUCT FAMILY BS616LV2011DC BS616LV2011EC BS616LV2011TC BS616LV2011AC BS616LV2011DI BS616LV2011EI BS616LV2011TI BS616LV2011AI OPERATING TEMPERATURE Vcc RANGE ( ICCSB1, Max ) POWER DISSIPATION STANDBY Operating ( ICC, Max ) PKG TYPE DICE TSOP2-44 TSOP1-48 BGA-48-0608 DICE TSOP2-44 TSOP1-48 BGA-48-0608 Vcc= 3.0V 0.7u A Vcc= 5.0V 6u A Vcc= 3.0V 20m A Vcc= 5.0V 40m A +0 C to +70 C 2.4V ~ 5.5V 70/100 -40...