BS616LV2012 Datasheet

Manufacturer: Brilliance Semiconductor

Datasheet Details

Part number	BS616LV2012
Datasheet	BS616LV2012_BrillianceSemiconductor.pdf
File Size	211.72 KB
Manufacturer	Brilliance Semiconductor
Description	Very Low Power/Voltage CMOS SRAM

BS616LV2012 Overview

The BS616LV2012 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power.

BS616LV2012 Key Features

Very low operation voltage : 2.7 ~ 3.6V
Very low power consumption
High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V
Automatic power down when chip is deselected
Three state outputs and TTL patible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE and OE options
I/O Configuration x8/x16 selectable by LB and UB pin
DESCRIPTION

More Datasheets from Brilliance Semiconductor

See all Brilliance Semiconductor datasheets

Part Number	Description
BS616LV2010	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2011	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2013	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2015	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2016	Very Low Power CMOS SRAM
BS616LV2018	Very Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616LV2020	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
BS616LV2021	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
BS616LV2023	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
BS616LV2025	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

Datasheet Details

BS616LV2012 Overview

BS616LV2012 Key Features

More Datasheets from Brilliance Semiconductor

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