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BS616LV2012 - Very Low Power/Voltage CMOS SRAM

Datasheet Summary

Description

The BS616LV2012 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.7V to 3.6V supply voltage.

Features

  • S.
  • Very low operation voltage : 2.7 ~ 3.6V.
  • Very low power consumption : Vcc = 3.0V C-grade: 30mA (Max. ) operating current I -grade: 35mA (Max. ) operating current 0.15uA (Typ. ) CMOS standby current.
  • High speed access time : -70 70ns (Max. ) at Vcc = 3.0V -10 100ns (Max. ) at Vcc = 3.0V.
  • Automatic power down when chip is deselected.
  • Three state outputs and TTL compatible.
  • Fully static operation.
  • Data retention supply voltage as low as 1.

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Datasheet Details

Part number BS616LV2012
Manufacturer Brilliance Semiconductor
File Size 211.72 KB
Description Very Low Power/Voltage CMOS SRAM
Datasheet download datasheet BS616LV2012 Datasheet
Additional preview pages of the BS616LV2012 datasheet.

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Full PDF Text Transcription

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BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit BS616LV2012 „ FEATURES • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 30mA (Max.) operating current I -grade: 35mA (Max.) operating current 0.15uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V •Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options • I/O Configuration x8/x16 selectable by LB and UB pin „ DESCRIPTION The BS616LV2012 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.
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