| Part number | BS616LV2016 |
|---|---|
| Datasheet | BS616LV2016-BrillianceSemiconductor.pdf |
| File Size | 207.46 KB |
| Manufacturer | Brilliance Semiconductor |
| Description | Very Low Power CMOS SRAM |
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The BS616LV2016 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 by 16 bits and operates form a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power.
See all Brilliance Semiconductor datasheets
| Part Number | Description |
|---|---|
| BS616LV2010 | Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
| BS616LV2011 | Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
| BS616LV2012 | Very Low Power/Voltage CMOS SRAM |
| BS616LV2013 | Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
| BS616LV2015 | Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
| BS616LV2018 | Very Low Power/Voltage CMOS SRAM 128K X 16 bit |
| BS616LV2020 | Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
| BS616LV2021 | Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
| BS616LV2023 | Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
| BS616LV2025 | Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable |
