Datasheet4U Logo Datasheet4U.com

BS616UV1610 - Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit

Datasheet Summary

Description

The BS616UV1610 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wide range of 1.8V to 2.3V supply voltage.

Features

  • S Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610.

📥 Download Datasheet

Datasheet preview – BS616UV1610

Datasheet Details

Part number BS616UV1610
Manufacturer Brilliance Semiconductor
File Size 217.31 KB
Description Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit
Datasheet download datasheet BS616UV1610 Datasheet
Additional preview pages of the BS616UV1610 datasheet.

📁 Similar Datasheet

  • BS616LV4017 - Very Low Power/Voltage CMOS SRAM 256K X 16 bit (BSI)
  • BS600 - Water Bath Instruction Manual (Yamato)
  • BS6004 - PVC Cable (Linnet)
  • BS6004 - Cable (Nexans)
  • BS62LV1605 - Very Low Power/Voltage CMOS SRAM 2M X 8 bit (Brilliance)
  • BS62LV4007 - Very Low Power/Voltage CMOS SRAM 512K X 8 bit (BSI)
  • BS62LV8006 - Very Low Power/Voltage CMOS SRAM 1M X 8 bit (Brilliance)
  • BS62UV1027 - Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit (Brilliance)
  • BS65F2042 - NFC Reader Touch Flash MCU (Holtek Semiconductor)
  • BS660 - Water Bath Instruction Manual (Yamato)
Other Datasheets by Brilliance Semiconductor
  • BS616UV1620 - Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
  • BS616UV1010 - Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit
  • BS616UV2011 - Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit
  • BS616UV2021 - Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
  • BS616UV4010 - Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit
  • BS616UV4020 - Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
  • BS616UV8010 - Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
  • BS616UV8011 - Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit

Full PDF Text Transcription

Click to expand full text
BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610 „ DESCRIPTION The BS616UV1610 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wide range of 1.8V to 2.3V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 1.2uA and maximum access time of 70/100ns in 2V operation. Easy memory expansion is provided by an active LOW chip enable(CE1), active HIGH chip enable (CE2), active LOW output enable(OE) and three-state output drivers. The BS616UV1610 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.
Published: |