BS616UV1610 Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit

Brilliance Semiconductor

Description

BSI * .
The BS616UV1610 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 words by 16 bits and operates from a wi.

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Datasheet Specifications

Part number: BS616UV1610
Manufacturer: Brilliance Semiconductor
File Size: 217.31 KB
Datasheet: BS616UV1610_BrillianceSemiconductor.pdf
Description: Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit

Features

* Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610

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BS616UV1610 Ultra Low Power Voltage CMOS SRAM bit Brilliance Semiconductor

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