BS616UV1610- Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616UV1010- Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit
BS616UV2011- Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit
BS616UV2021- Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
BS616UV4010- Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit
BS616UV4020- Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
BS616UV8010- Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
BS616UV8011- Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
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BSI
FEATURES
Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
DESCRIPTION
BS616UV1620
• Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 1.8V C-grade : 25mA (Max.) operating current I- grade : 30mA (Max.) operating current 1.2uA (Typ.) CMOS standby current • High speed access time : -70 70ns (Max.) at Vcc = 2.0V -10 100ns (Max.) at Vcc = 2.0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.