BS616LV2012 - Very Low Power/Voltage CMOS SRAM

Brilliance Semiconductor

BS616LV2012 Description

BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit BS616LV2012 * .
The BS616LV2012 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide.

BS616LV2012 Features

* Very low operation voltage : 2.7 ~ 3.6V
* Very low power consumption : Vcc = 3.0V C-grade: 30mA (Max. ) operating current I -grade: 35mA (Max. ) operating current 0.15uA (Typ. ) CMOS standby current
* High speed access time : -70 70ns (Max. ) at Vcc = 3.0V -10 100ns (Max. ) at V

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Datasheet Details

Part number: BS616LV2012
Manufacturer: Brilliance Semiconductor
File Size: 211.72 KB
Datasheet: BS616LV2012_BrillianceSemiconductor.pdf
Description: Very Low Power/Voltage CMOS SRAM

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Very Low Power Voltage CMOS SRAM Brilliance Semiconductor

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