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2N5770 - NPN SILICON PLANAR EPITAXIAL TRANSISTOR

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Part number 2N5770
Manufacturer CDIL
File Size 122.04 KB
Description NPN SILICON PLANAR EPITAXIAL TRANSISTOR
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Description

SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation@ Ta=25ºC Derate Above 25ºC PD Power Dissipation@ Tc=25ºC Derate Above 25ºC PD Operating And Storage Junction Temperature Range Tj, Tstg VALUE 15 30 4.5 50 350 2.8 850 6.8 - 55 to +150 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=3mA, IB=0 Collecto

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