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2N699 - NPN SILICON EPITAXIAL TRANSISTOR

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Part number 2N699
Manufacturer CDIL
File Size 143.00 KB
Description NPN SILICON EPITAXIAL TRANSISTOR
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SYMBOL Collector Emitter Voltage VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Total Device Dissipation @ Ta=25ºC PD Derate Above 25ºC Total Device Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range THERMAL RESISTANCE Junction to Ambient Junction to Case Rth(j-a) Rth(j-c) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage BVCER

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