2N697 - NPN SILICON EPITAXIAL TRANSISTOR

Product Overview

CDIL

Datasheet Details

Part number	2N697
Manufacturer	CDIL
File Size	138.55 KB
Description	NPN SILICON EPITAXIAL TRANSISTOR
Datasheet	2N697 Datasheet
Additional preview pages of the 2N697 datasheet.

Product details

Description

SYMBOL Collector Emitter Voltage VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Power Dissipation @ Ta=25ºC PD Derate Above 25ºC Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Base Breakdown Voltage BVCBO IC=100µA,IE=0 Collector Emitter Breakdown Voltage BVCER IC=100mA,RBE=10Ω Emiter Base Bre

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Published: Jun 6, 2017 |