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BC413B - NPN SILICON PLANAR EPITAXIAL TRANSISTORS

This page provides the datasheet information for the BC413B, a member of the BC413 NPN SILICON PLANAR EPITAXIAL TRANSISTORS family.

Datasheet Summary

Description

SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC VCEO VCBO VEBO IC PD PD Derate Above 25ºC Operating and Storage Junction Temperature Range TJ, Tstg BC413 30 45

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Datasheet Details

Part number BC413B
Manufacturer CDIL
File Size 350.18 KB
Description NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet BC413B Datasheet
Additional preview pages of the BC413B datasheet.

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Other Datasheets by CDIL
  • BC413 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC413C - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC414 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
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Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC413, B, C BC414, B, C TO-92 Plastic Package CB E ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC VCEO VCBO VEBO IC PD PD Derate Above 25ºC Operating and Storage Junction Temperature Range TJ, Tstg BC413 30 45 5.0 100 350 2.8 1.0 8.
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