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BD139 - NPN EPITAXIAL SILICON POWER TRANSISTORS

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Datasheet preview – BD139

Datasheet Details

Part number BD139
Manufacturer CDIL
File Size 234.56 KB
Description NPN EPITAXIAL SILICON POWER TRANSISTORS
Datasheet download datasheet BD139 Datasheet
Note This datasheet PDF includes multiple part numbers: BD139, BD135.
Please refer to the document for exact specifications by model.
Additional preview pages of the BD139 datasheet.

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Description

Collector -Emitter Voltage Collector -Emitter Voltage (RBE=1kΩ) Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Power Dissipation @ Tc=70ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCER VCBO VEBO IC ICM IB PD PD PD Tj, Tstg BD135 45 45 45 BD137 60 60 60 5.0 1.5 2.0 0.5 1.25 10 12.5 100 8.0 - 55 to +150 THERMAL CHARACTERISTICS Junct

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