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CSC1009 - PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS

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SYMBOL CSA709 CSC1009 VCBO 160 160 Collector -Base Voltage VCEO 150 140 Collector -Emitter Voltage VEBO 8.0 8.0 Emitter -Base Voltage IC 700 700 Collector Current PC 800 800 Collector Dissipation Tj, Tstg -55 to +150 -55 to +150 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERIS

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Part number CSC1009
Manufacturer CDIL
File Size 122.90 KB
Description PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS CSA709 PNP CSC1009 NPN TO-92 CBE www.DataSheet4U.com High Voltage Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C ) DESCRIPTION SYMBOL CSA709 CSC1009 VCBO 160 160 Collector -Base Voltage VCEO 150 140 Collector -Emitter Voltage VEBO 8.0 8.0 Emitter -Base Voltage IC 700 700 Collector Current PC 800 800 Collector Dissipation Tj, Tstg -55 to +150 -55 to +150 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION CSA709 CSC1009 VCBO IC=100uA.IE=0 >160 >160 Collector -Base Voltage VCEO IC=10mA,IB=0 >150 >140 Collector -Emitter Voltage VEBO IE=100uA, IC=0 >8.0 >8.
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