Datasheet4U Logo Datasheet4U.com

2SC3583

NPN Silicon Transistor

2SC3583 Features

* NF

* Ga 1.2 dB TYP. 13 dB TYP. @f = 1.0 GHz @f = 1.0 GHz PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 +0.1

* 0.15 0.4 2 13 +0.1

* 0.05 2.9±0.2O 0.95 0.95 0.4 +0.1

* 0.06 0.16 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VC

2SC3583 General Description

The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride pas.

2SC3583 Datasheet (1.70 MB)

Preview of 2SC3583 PDF

Datasheet Details

Part number:

2SC3583

Manufacturer:

CEL

File Size:

1.70 MB

Description:

Npn silicon transistor.
DDAATTAA SSHHEEEETT SILICON TRANSISTOR NE68133 / 2SC3583 JEITA Part No. MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR +0.1UT <.

📁 Related Datasheet

2SC3580 - SMALL-SIGNAL TRANSISTOR (Isahaya Electronics)
ISAHAYA ELECTRONICS CORPORATION Free Datasheet http://../ ISAHAYA ELECTRONICS CORPORATION Free Datasheet http://...

2SC3581 - SMALL-SIGNAL TRANSISTOR (Isahaya Electronics Corporation)
.. ISAHAYA ELECTRONICS CORPORATION .. ISAHAYA ELECTRONICS CORPORATION .. .

2SC3582 - NPN Silicon Transistor (NEC)
DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN e.

2SC3582 - Silicon NPN RF Transistor (Inchange Semiconductor)
isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3582 DESCRIPTION ·Low Noise Figure, High Gain, and High Current Capability Achieve a Very Wi.

2SC3583 - NPN Silicon Transistor (NEC)
DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3583 is an NPN e.

2SC3583 - NPN EPITAXIAL SILICON TRANSISTOR (UTC)
UNISONIC TECHNOLOGIES CO., LTD 2SC3583 NPN EPITAXIAL SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR  DESCRIPTI.

2SC3583 - Silicon NPN RF Transistor (Inchange Semiconductor)
isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise and High Gain NF = 1.2 dB TYP., Ga = 11 dB TYP. @VCE = 8 V, IC = 7 mA, f = 1.0 GHz ·High Power G.

2SC3583 - NPN Silicon Epitaxial Transistor (Kexin)
SMD Type NPN Silicon Epitaxial Transistor 2SC3583 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features NF 1.2 dB TYP. @f.

TAGS

2SC3583 NPN Silicon Transistor CEL

Image Gallery

2SC3583 Datasheet Preview Page 2 2SC3583 Datasheet Preview Page 3

2SC3583 Distributor