* NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA
* S21e2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V Collector
2SC4094
CEL
1.87 MB
Silicon transistor.
DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
NE68139
/
2SC4094 JEITA Part No.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MIN.
📁 Related Datasheet
2SC4092 - NPN SILICON EPITAXIAL TRANSISTOR
(NEC)
DATA SHEET
SILICON TRANSISTOR
2SC4092
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
DESCRIPTION
The 2SC4092 .
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2SC4094 - NPN Transistor
(NEC)
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2SC4094
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
DESCRIPTION
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2SC4095 - NPN SILICON EPITAXIAL TRANSISTOR
(NEC)
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2SC4095
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2SC4095R - NPN SILICON TRANSISTOR
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2SC4097 - Medium Power Transistor
(Rohm)
2SC4097
Medium Power Transistor (32V, 500mA)
Parameter
VCEO IC
Value
32V 500mA
lFeatures
1)High ICMax. ć ICMax.=0.5A 2)Low VCE(sat). ć Optimal for .
2SC4097 - NPN Plastic-Encapsulate Transistor
(SeCoS)
Elektronische Bauelemente
2SC4097
0.5A , 32V NPN Plastic-Encapsulate Transistor
RoHS Compliant Product A suffix of ā-Cā specifies halogen & lead-fre.
2SC4097 - Silicon Epitaxial Planar Transistor
(GME)
Silicon Epitaxial Planar Transistor
FEATURES
z Excellent hFE linearity. z Power dissipation:PCM=200mW
Pb
Lead-free
Production specification
2SC4097.
