NE4210S01 Datasheet, Amplifier, CEL

✔ NE4210S01 Features

Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz
Gate Length: Lg ≤ 0.20 µm
Gate Width : Wg = 160 µm ORDERING INFORMATIO

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NE4210S01

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CEL

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📄 Datasheet

Description:

X to ku band super low noise amplifier. The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise a

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California Eastern Laboratories (CEL)

RF MOSFET GAAS HJ-FET 2V SMD

DigiKey

NE4210S01

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NE4210S01 BAND SUPER LOW NOISE AMPLIFIER CEL