Datasheet4U Logo Datasheet4U.com

NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

NE429M01 Description

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET .
The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

NE429M01 Features

* Super low noise figure & High associated gain NF = 0.9 dB TYP. , Ga = 10 dB TYP. @ f = 12 GHz 6-pin super minimold package Gate width: Wg = 200µm ORDERING INFORMATION Part Number NE429M01-T1 Package 6-pin super minimold Marking V72 Supplying Form Embossed tape 8 mm wide

📥 Download Datasheet

Preview of NE429M01 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
NE429M01
Manufacturer
NEC
File Size
50.83 KB
Datasheet
NE429M01_NEC.pdf
Description
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

📁 Related Datasheet

  • NE41137 - N-Channel GaAs Dual Gate MES FET (California Eastern Laboratories)
  • NE4558 - Dual general-purpose operational amplifier (Philips)
  • NE46234 - NPN SILICON RF TRANSISTOR (CEL)

📌 All Tags

NEC NE429M01-like datasheet