NE68619 Datasheet - CEL

SILICON TRANSISTOR

NE68619 Features

* HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz

* LOW VOLTAGE/LOW CURRENT OPERATION

* HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz

* LOW NOISE: 1.5 dB AT 2.0 GHz

* AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT

NE68619 General Description

The NE686 series of NPN epitaxial silicon transistors are designed for low voltage/low current, amplifier and oscillator applications. NE686's high fT make it an excellent choice for portable wireless applications up to 5 GHz. The NE686 die is available in six different low cost plastic surface moun.

NE68619 Datasheet (1.17 MB)

NE68619 Datasheet Preview — Preview of NE68619 PDF

Datasheet Details

Part number:

NE68619

Manufacturer:

CEL

File Size:

1.17 MB

Description:

Silicon transistor.

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NE68619 SILICON TRANSISTOR CEL

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NE68619 Features

NE68619 General Description

Datasheet Details

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