Part number: NE680
Manufacturer: CEL
File Size: 1.36MB
Download: 📄 Datasheet
Description: NPN SILICON HIGH FREQUENCY TRANSISTOR
The NE680 is a type of transistor commonly used in various electronic applications. It is typically a general-purpose NPN transistor, characterized by its ability to amplify and switch electronic signals and power.
### Key Specifications:
- **Type:** NPN Bipolar Junction Transistor (BJT)
- **Maximum Collector-Emitter Voltage (Vce):** Typically around 80V
- **Maximum Collector Current (Ic):** Generally up to 1A
- **Gain (hFE):** The.
The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low c.
* HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz
* LOW NOISE FIGURE:
1.7 dB at 2 GHz 2.6 dB at 4 GHz
* HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz
* .
Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six di.
Image gallery
TAGS
📁 Related Datasheet
NE68000 - NPN SILICON HIGH FREQUENCY TRANSISTOR
(CEL)
NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN .
NE68018 - NONLINEAR MODEL
(NEC)
NONLINEAR MODEL
SCHEMATIC
CCBPKG CCB LC LBX Base LB CCE LCX Collector
NE68018
Q1
CBEPKG
LE
CCEPKG
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS (.
NE68018 - NPN SILICON HIGH FREQUENCY TRANSISTOR
(CEL)
NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN .
NE68019 - NPN SILICON HIGH FREQUENCY TRANSISTOR
(CEL)
NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN .
NE68030 - NPN SILICON HIGH FREQUENCY TRANSISTOR
(CEL)
NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN .
NE68033 - NPN SILICON HIGH FREQUENCY TRANSISTOR
(CEL)
NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN .
NE68035 - NPN SILICON HIGH FREQUENCY TRANSISTOR
(CEL)
NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN .
NE68039 - NPN SILICON HIGH FREQUENCY TRANSISTOR
(CEL)
NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN .
NE68039R - NPN SILICON HIGH FREQUENCY TRANSISTOR
(CEL)
NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN .
NE681 - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
(NEC)
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz
NE.