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NE681 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

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Description

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR .
r d e e o s f c i Th i h f d t e of d m s n o e le fr m a s m l o l c a e c r e s a Ple ils: a t e 5 d 3 1 8 6 E N E B 00 (CHIP) 35 (MICRO-X) NEC's N.

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Datasheet Specifications

Part number
NE681
Manufacturer
NEC
File Size
218.97 KB
Datasheet
NE681_NEC.pdf
Description
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

Features

* HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz
* LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz NE681 SERIES
* HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz
* LOW COST rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o s l w PL l

Applications

* Both the chip and micro-x versions are suitable for amplifier applications up to 4 GHz. The NE681 die is also available in six different low cost plastic surface mount package styles. NE681's unique device characteristics allow you to use a single matching point to simultaneously achieve both low n

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