NE68119 Datasheet - CEL

NE68119 NPN SILICON EPITAXIAL TRANSISTOR

The NE68119 / 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride pas.

NE68119 Features

* Low Voltage Use.

* High fT : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)

* Low Cre : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)

* Low NF : 1.4 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)

* High |S21e|2: 12 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)

NE68119 Datasheet (1.81 MB)