* Low Voltage Use.
* High fT : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
* Low Cre : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
* Low NF : 1.4 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
* High |S21e|2: 12 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
NE68119
CEL
1.81 MB
Npn silicon epitaxial transistor.
DATA SHEET SILICON TRANSISTOR NE68119 / 2SC5007 JEITA Part No. NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD 1.6±0.1-OUT 1.0 0.5.
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