NE68133 Datasheet - CEL

NE68133 SILICON TRANSISTOR

The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride pas.

NE68133 Features

* NF

* Ga 1.2 dB TYP. 13 dB TYP. @f = 1.0 GHz @f = 1.0 GHz PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 +0.1

* 0.15 0.4 2 13 +0.1

* 0.05 2.9±0.2O 0.95 0.95 0.4 +0.1

* 0.06 0.16 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VC

NE68133-CEL.pdf