NE68139 - SILICON TRANSISTOR

CEL

NE68139 Datasheet Preview — Preview of NE68139 PDF

Datasheet Details

Part number	NE68139
Manufacturer	CEL
File Size	1.87 MB
Description	SILICON TRANSISTOR
Datasheet	NE68139-CEL.pdf

NE68139 Product details

Description

The NE68139 / 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.This achieved by direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique.0.4 2 PACKAGE DIMENSIONS (Units: mm) +0.1 0.05 +0.1 0.05 2.8 +0.2 0.3 1.5

Features

NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA.
S21e2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA.

📁 NE68139 Similar Datasheet

NE681 - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)
NE68018 - NONLINEAR MODEL (NEC)
NE685 - SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)
NE68518 - NONLINEAR MODEL (NEC)
NE68519 - NONLINEAR MODEL (NEC)
NE685M03 - NPN SILICON TRANSISTOR (NEC)
NE685M23 - NPN SILICON TRANSISTOR (NEC)
NE686 - SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)

Other Datasheets by CEL

NE68130 - NPN SILICON RF TRANSISTOR
NE68133 - SILICON TRANSISTOR
NE68119 - NPN SILICON EPITAXIAL TRANSISTOR
NE681M03 - NPN SILICON TRANSISTOR
NE681M13 - NPN SILICON TRANSISTOR
NE680 - NPN SILICON HIGH FREQUENCY TRANSISTOR

Published: Aug 25, 2020 |