NE68039, NE680 Datasheet - CEL

NE68039, NE680, NPN SILICON HIGH FREQUENCY TRANSISTOR

NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB) SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR

Features

* HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz
* LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz
* HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz

Applications

* Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680's high fT makes it ideal for low voltage/low current applications, down to as low as 0.5 V / 0.5 mA. IC max for the

NE680-CEL.pdf