NE68030 Datasheet, Transistor, CEL

✔ NE68030 Features

HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz
LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz
HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz
EXCELLENT LOW VO

✔ NE68030 Application

Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also availab

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NE68030

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CEL

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📄 Datasheet

Description:

Npn silicon high frequency transistor. The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip a

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