Datasheet4U Logo Datasheet4U.com

2N3904 - NPN SILICON TRANSISTOR

Download the 2N3904 datasheet PDF. This datasheet also covers the 2N3903 variant, as both devices belong to the same npn silicon transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR 2N3903 and 2N3904 devices are silicon NPN transistors designed for general purpose amplifier and switching applications.

PNP complementary types are 2N3905 and 2N3906.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N3903-CENTRALSEMICONDUCTOR.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N3904 NPN switching transistor NXP
2N3904 NPN Amplifier Fairchild Semiconductor
2N3904 Silicon NPN Transistor Toshiba
2N3904 Silicon NPN Transistor NTE
2N3904 NPN Transistor Multicomp

Other Datasheets by Central Semiconductor

Part Number Description
2N3903 NPN SILICON TRANSISTOR
2N3905 SILICON PNP TRANSISTORS
2N3906 SILICON PNP TRANSISTORS
2N3947 SILICON NPN TRANSISTORS
2N3963 SILICON PNP TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N3903 2N3904 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3903 and 2N3904 devices are silicon NPN transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N3905 and 2N3906. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 40 6.0 200 625 -65 to +150 200 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICEV VCE=30V, VEB=3.0V BVCBO IC=10μA BVCEO IC=1.0mA BVEBO IE=10μA VCE(SAT) IC=10mA, IB=1.