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General Purpose Transistors
NPN Silicon
2N3903, 2N3904
Features
• Pb−Free Packages are Available*
DATA SHEET www.onsemi.com
COLLECTOR 3
2 BASE
1 EMITTER
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation
@ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
40
Vdc
60
Vdc
6.0
Vdc
200
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5
W
12
mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS (Note 1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.
2N3904 Datasheet
