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CEB13N10 N-Channel MOSFET

CEB13N10 Description

CEP13N10/CEB13N10 N-Channel Enhancement Mode Field Effect Transistor .

CEB13N10 Features

* 100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Dra

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Datasheet Details

Part number
CEB13N10
Manufacturer
CET
File Size
100.89 KB
Datasheet
CEB13N10_CET.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET CET
CET CEB13N10-like datasheet