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CEB13N10L N-Channel MOSFET

CEB13N10L Description

CEP13N10L/CEB13N10L N-Channel Enhancement Mode Field Effect Transistor .

CEB13N10L Features

* 100V, 12.8A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE

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Datasheet Details

Part number
CEB13N10L
Manufacturer
CET
File Size
345.33 KB
Datasheet
CEB13N10L-CET.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET CET
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