CEB50N06 Datasheet - CET

CEB50N06, N-Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

Features

* 60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEP50N06/CEB50N06 D D G G D S S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 S ABSOLUTE MAXI

CEB50N06_CET.pdf