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CEB50N06 N-Channel MOSFET

CEB50N06 Description

N-Channel Enhancement Mode Field Effect Transistor .

CEB50N06 Features

* 60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEP50N06/CEB50N06 D D G G D S S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 S ABSOLUTE MAXI

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Datasheet Details

Part number
CEB50N06
Manufacturer
CET
File Size
390.06 KB
Datasheet
CEB50N06_CET.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET CET
CET CEB50N06-like datasheet