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CEB5175 P-Channel MOSFET

CEB5175 Description

CEP5175/CEB5175 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY .

CEB5175 Features

* -55V, -50A, RDS(ON) = 23mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSO

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Datasheet Details

Part number
CEB5175
Manufacturer
CET
File Size
608.34 KB
Datasheet
CEB5175-CET.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET CET
CET CEB5175-like datasheet