CEB6060N - N-Channel Enhancement Mode Field Effect Transistor

CET

Datasheet Details

Part number	CEB6060N
Manufacturer	CET
File Size	439.30 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	CEB6060N-CET.pdf

60V, 42A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEP6060N/CEB6060N D D G G D S S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 S.

📁 CEB6060N Similar Datasheet

CEB6060 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB6060L - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB6060LR - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB6060R - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB6020P - Single P-Channel Enhancement Mode MOSFET (Chino-Excel Technology)
CEB603 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB6030AL - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB6030L - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

Other Datasheets by CET

Published: May 5, 2014 |