CEB6060L, CEB6060L_Chino Datasheet - Chino-Excel Technology

CEB6060L N-Channel Enhancement Mode Field Effect Transistor

CEB6060L Features

* 60V, 52.4A,RDS(ON) = 21mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXI

CEB6060L_Chino-ExcelTechnology.pdf

CEB6060L Datasheet Preview — This datasheet PDF includes multiple part numbers: CEB6060L, CEB6060L_Chino. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

CEB6060L, CEB6060L_Chino

Manufacturer:

Chino-Excel Technology

File Size:

395.84 KB

Description:

N-channel enhancement mode field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: CEB6060L, CEB6060L_Chino.
Please refer to the document for exact specifications by model.

CEB6060L Distributor

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CEB6060L CEB6060L_Chino N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology