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CEB6106 N-Channel MOSFET

CEB6106 Description

CEP6106/CEB6106 N-Channel Enhancement Mode Field Effect Transistor .

CEB6106 Features

* 57V, 56A ,RDS(ON) = 19mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unles

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Datasheet Details

Part number
CEB6106
Manufacturer
CET
File Size
190.50 KB
Datasheet
CEB6106-CET.pdf
Description
N-Channel MOSFET

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