CEB6030L Features
* 30V, 52A,RDS(ON) = 13.5mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE M
CEB6030L_Chino-ExcelTechnology.pdf
Datasheet Details
CEB6030L, CEB6030L_Chino
Chino-Excel Technology
60.56 KB
N-channel logic level enhancement mode field effect transistor.
This datasheet PDF includes multiple part numbers: CEB6030L, CEB6030L_Chino.
Please refer to the document for exact specifications by model.
CEB6030L Distributor
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