Datasheet4U Logo Datasheet4U.com

CEB840B

N-Channel MOSFET

CEB840B Features

* 440V, 9A,RDS(ON) = 0.76Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unles

CEB840B Datasheet (386.90 KB)

Preview of CEB840B PDF

Datasheet Details

Part number:

CEB840B

Manufacturer:

CET

File Size:

386.90 KB

Description:

N-channel mosfet.

📁 Related Datasheet

CEB840A - N-Channel MOSFET (CET)
CEP840A/CEB840A CEF840A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP840A CEB840A CEF840A VDSS 500V 500V 500V.

CEB840G - N-Channel MOSFET (CET)
CEP840G/CEB840G CEF840G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP840G CEB840G VDSS 500V 500V CEF840G 50.

CEB840L - N-Channel MOSFET (CET)
CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP840L CEB840L VDSS 500V 500V CEF840L 50.

CEB840N - N-Channel MOSFET (CET)
CEP840N/CEB840N CEF840N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP840N CEB840N VDSS 500V 500V CEF840N 500V RDS(ON) 0.8.

CEB84A4 - N-Channel MOSFET (CET)
CEP84A4/CEB84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 90A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(ON) = 7.8mΩ @VGS = 4.5V. Super.

CEB8030 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEB8030L - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEB8030LA - N-Channel MOSFET (CET)
CEP8030LA/CEB8030LA N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A,RDS(ON) = 6.5mΩ @VGS = 10V. RDS(ON) = 9.0mΩ @VGS = 4.5V. Su.

TAGS

CEB840B N-Channel MOSFET CET

Image Gallery

CEB840B Datasheet Preview Page 2 CEB840B Datasheet Preview Page 3

CEB840B Distributor