CEB840B - N-Channel MOSFET

Datasheet Details

440V, 9A,RDS(ON) = 0.76Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S.

📁 CEB840B Similar Datasheet

CEB8030 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB8030L - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB803AL - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB8060 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB8060L - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB8060LR - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB8060R - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB1012 - N-Channel Enhancement Mode Field Transistor (Chino-Excel Technology)

Other Datasheets by CET

Published: Jun 12, 2018 |