Part number:
CEB840G
Manufacturer:
CET
File Size:
375.96 KB
Description:
N-channel mosfet.
* Type CEP840G CEB840G VDSS 500V 500V CEF840G 500V RDS(ON) 0.85Ω 0.85Ω 0.85Ω ID @VGS 8A 10V 8A 10V 8A e 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES
CEB840G
CET
375.96 KB
N-channel mosfet.
📁 Related Datasheet
CEB840A - N-Channel MOSFET
(CET)
CEP840A/CEB840A
CEF840A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP840A CEB840A CEF840A
VDSS 500V 500V
500V.
CEB840B - N-Channel MOSFET
(CET)
CEP840B/CEB840B
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
440V, 9A,RDS(ON) = 0.76Ω @VGS = 10V. Super high dense cell .
CEB840L - N-Channel MOSFET
(CET)
CEP840L/CEB840L
CEF840L
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP840L CEB840L
VDSS 500V 500V
CEF840L
50.
CEB840N - N-Channel MOSFET
(CET)
CEP840N/CEB840N CEF840N
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP840N CEB840N
VDSS 500V 500V
CEF840N
500V
RDS(ON) 0.8.
CEB84A4 - N-Channel MOSFET
(CET)
CEP84A4/CEB84A4
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
40V, 90A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(ON) = 7.8mΩ @VGS = 4.5V.
Super.
CEB8030 - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
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CEB8030L - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
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CEB8030LA - N-Channel MOSFET
(CET)
CEP8030LA/CEB8030LA
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 75A,RDS(ON) = 6.5mΩ @VGS = 10V. RDS(ON) = 9.0mΩ @VGS = 4.5V.
Su.
