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CEC8218 Dual N-Channel MOSFET

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Description

CEC8218 Dual N-Channel Enhancement Mode Field Effect Transistor .

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Datasheet Specifications

Part number
CEC8218
Manufacturer
CET
File Size
637.99 KB
Datasheet
CEC8218-CET.pdf
Description
Dual N-Channel MOSFET

Features

* 20V, 7A, RDS(ON) = 20mΩ @VGS = 4.5V. RDS(ON) = 28mΩ @VGS = 2.5V. RDS(ON) = 48mΩ @VGS = 1.8V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D
* 1K G1
* 1K G2 S1
* Typical value by design 5 67 8 Bottom Vi

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