CED12N10 - N-Channel MOSFET
CED12N10 Features
* 100V, 11A, RDS(ON) = 180mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G D G S CEU SERIES TO-252(D-PAK) G D S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter
