CED10P10 Features
* -100V, -8A, RDS(ON) = 350mΩ @VGS = -10V. CED10P10/CEU10P10 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAX
CED10P10_Chino-ExcelTechnology.pdf
Datasheet Details
CED10P10, CED10P10_Chino
Chino-Excel Technology
409.51 KB
P-channel mosfet.
This datasheet PDF includes multiple part numbers: CED10P10, CED10P10_Chino.
Please refer to the document for exact specifications by model.
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