CED12N10L Features
* 100V, 11A, RDS(ON) = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED12N10L/CEU12N10L D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO
CED12N10L_Chino-ExcelTechnology.pdf
Datasheet Details
CED12N10L, CED12N10L_Chino
Chino-Excel Technology
585.44 KB
N-channel mosfet.
This datasheet PDF includes multiple part numbers: CED12N10L, CED12N10L_Chino.
Please refer to the document for exact specifications by model.
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