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CEF02N6 N-Channel MOSFET

CEF02N6 Description

CEF02N6 Sep.2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor .

CEF02N6 Features

* 600V , 1.5A , RDS(ON)=5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole D 6 G G D S S TO-220F ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Vo

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Datasheet Details

Part number
CEF02N6
Manufacturer
CET
File Size
124.12 KB
Datasheet
CEF02N6-CET.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET CET
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