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CEFF634 N-Channel Field Effect Transistor

CEFF634 Description

CEFF634 Nov.2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor .

CEFF634 Features

* 250V , 6A , RDS(ON)=450mΩ @VGS=10V. D 6 Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole G G D S S TO-220F ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Drain-Source Volta

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Datasheet Details

Part number
CEFF634
Manufacturer
CET
File Size
69.40 KB
Datasheet
CEFF634_CET.pdf
Description
N-Channel Field Effect Transistor

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N-Channel Field Effect Transistor CET
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