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CEFF634

N-Channel Field Effect Transistor

CEFF634 Features

* 250V , 6A , RDS(ON)=450mΩ @VGS=10V. D 6 Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole G G D S S TO-220F ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Drain-Source Volta

CEFF634 Datasheet (69.40 KB)

Preview of CEFF634 PDF

Datasheet Details

Part number:

CEFF634

Manufacturer:

CET

File Size:

69.40 KB

Description:

N-channel field effect transistor.

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TAGS

CEFF634 N-Channel Field Effect Transistor CET

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