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CEFF630

N-Channel Enhancement Mode Field Effect Transistor

CEFF630 Features

* 200V, 7.2A, RDS(ON) = 300mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220F full-pak for through hole. D G D S CEF SERIES TO-220F G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

CEFF630 Datasheet (58.16 KB)

Preview of CEFF630 PDF

Datasheet Details

Part number:

CEFF630

Manufacturer:

Chino-Excel Technology

File Size:

58.16 KB

Description:

N-channel enhancement mode field effect transistor.

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CEFF630 N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology

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