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CEFF630, CEFF630_Chino N-Channel Enhancement Mode Field Effect Transistor

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Description

CEFF630 N-Channel Enhancement Mode Field Effect Transistor .

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This datasheet PDF includes multiple part numbers: CEFF630, CEFF630_Chino. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
CEFF630, CEFF630_Chino
Manufacturer
Chino-Excel Technology
File Size
58.16 KB
Datasheet
CEFF630_Chino-ExcelTechnology.pdf
Description
N-Channel Enhancement Mode Field Effect Transistor
Note
This datasheet PDF includes multiple part numbers: CEFF630, CEFF630_Chino.
Please refer to the document for exact specifications by model.

Features

* 200V, 7.2A, RDS(ON) = 300mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220F full-pak for through hole. D G D S CEF SERIES TO-220F G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

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