Datasheet4U Logo Datasheet4U.com

CEFF630, CEFF630_Chino Datasheet - Chino-Excel Technology

CEFF630 N-Channel Enhancement Mode Field Effect Transistor

CEFF630 Features

* 200V, 7.2A, RDS(ON) = 300mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220F full-pak for through hole. D G D S CEF SERIES TO-220F G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

CEFF630_Chino-ExcelTechnology.pdf

This datasheet PDF includes multiple part numbers: CEFF630, CEFF630_Chino. Please refer to the document for exact specifications by model.
CEFF630 Datasheet Preview Page 2 CEFF630 Datasheet Preview Page 3

Datasheet Details

Part number:

CEFF630, CEFF630_Chino

Manufacturer:

Chino-Excel Technology

File Size:

58.16 KB

Description:

N-channel enhancement mode field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: CEFF630, CEFF630_Chino.
Please refer to the document for exact specifications by model.

CEFF630 Distributor

📁 Related Datasheet

CEFF630B N-Channel MOSFET (CET)

CEFF634 N-Channel Field Effect Transistor (CET)

CEFF640 N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

CEF01N6 N-Channel MOSFET (CET)

CEF01N65 N-Channel MOSFET (CET)

CEF01N6G N-Channel MOSFET (CET)

CEF02N6 N-Channel MOSFET (CET)

KLT1C20DC9 N-Channel MOSFET (CET)

TAGS

CEFF630 CEFF630_Chino N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology