CEM3053
CET
429.84kb
P-channel mosfet.
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CEM3032 - N-Channel Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
CEM3032
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 18A, RDS(ON) = 4.8mΩ @VGS = 10V. RDS(ON) = 6.8mΩ @VGS = 4.5V.
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CEM3060 - N-Channel Enhancement Mode Field Effect Transistor
(CET)
CEM3060
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 14A, RDS(ON) = 7.8mΩ @VGS = 10V. RDS(ON) = 11.5mΩ @VGS = 4.5V. Super high den.
CEM3082 - N-Channel Enhancement Mode Field Effect Transistor
(CET)
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 12A, RDS(ON) = 10.5mΩ @VGS = 10V. RDS(ON) = 15.0mΩ @VGS = 4.5V. Super high dense cell.
CEM3083 - P-Channel MOSFET
(CET)
CEM3083
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -13A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 15.5mΩ @VGS = -4..
CEM3109 - Dual MOSFET
(CET)
CEM3109
Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY
FEATURES
30V, 10A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 20mΩ @VG.
CEM3120 - N-Channel Enhancement Mode Field Effect Transistor
(CET)
CEM3120
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 10A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense .
CEM3128 - Dual N-Channel Enhancement Mode Field Effect Transistor
(CET)
CEM3128
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 9A, RDS(ON) = 16mΩ @VGS = 10V. RDS(ON) = 23mΩ @VGS = 4.5V. Super high de.
CEM3138 - Dual N-Channel Enhancement Mode Field Effect Transistor
(CET)
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 9.1A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V. 30V, 6.9A, RDS(ON) .
CEM3172 - N-Channel Enhancement Mode Field Effect Transistor
(CET)
CEM3172
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 8.9A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense.
CEM3178 - Dual N-Channel Enhancement Mode Field Effect Transistor
(CET)
CEM3178
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super high .
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