CEM3109 Datasheet, Mosfet, CET

CEM3109 Features

• Mosfet 30V, 10A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. -30V, -8A, RDS(ON) = 20mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(

PDF File Details

Part number:

CEM3109

Manufacturer:

CET

File Size:

614.23kb

Download:

📄 Datasheet

Description:

Dual mosfet.

TAGS

CEM3109

CET

📁 Related Datasheet

CEM3120 - N-Channel Enhancement Mode Field Effect Transistor (CET)
CEM3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 10A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense .

CEM3128 - Dual N-Channel Enhancement Mode Field Effect Transistor (CET)
CEM3128 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9A, RDS(ON) = 16mΩ @VGS = 10V. RDS(ON) = 23mΩ @VGS = 4.5V. Super high de.

CEM3138 - Dual N-Channel Enhancement Mode Field Effect Transistor (CET)
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9.1A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V. 30V, 6.9A, RDS(ON) .

CEM3172 - N-Channel Enhancement Mode Field Effect Transistor (CET)
CEM3172 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 8.9A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense.

CEM3178 - Dual N-Channel Enhancement Mode Field Effect Transistor (CET)
CEM3178 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super high .

CEM3032 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM3032 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 18A, RDS(ON) = 4.8mΩ @VGS = 10V. RDS(ON) = 6.8mΩ @VGS = 4.5V. .

CEM3053 - P-Channel MOSFET (CET)
CEM3053 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -15A, RDS(ON) = 7mΩ @VGS = -10V. RDS(ON) = 15mΩ @VGS = -4.5V..

CEM3060 - N-Channel Enhancement Mode Field Effect Transistor (CET)
CEM3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 14A, RDS(ON) = 7.8mΩ @VGS = 10V. RDS(ON) = 11.5mΩ @VGS = 4.5V. Super high den.

CEM3082 - N-Channel Enhancement Mode Field Effect Transistor (CET)
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 12A, RDS(ON) = 10.5mΩ @VGS = 10V. RDS(ON) = 15.0mΩ @VGS = 4.5V. Super high dense cell.

CEM3083 - P-Channel MOSFET (CET)
CEM3083 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -13A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 15.5mΩ @VGS = -4..