CEM3120 Datasheet, Transistor, CET

CEM3120 Features

  • Transistor 30V, 10A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D 7 D 6 D 5 5 Lea

PDF File Details

Part number:

CEM3120

Manufacturer:

CET

File Size:

270.83kb

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📄 Datasheet

Description:

N-channel enhancement mode field effect transistor.

Datasheet Preview: CEM3120 📥 Download PDF (270.83kb)
Page 2 of CEM3120 Page 3 of CEM3120

TAGS

CEM3120
N-Channel
Enhancement
Mode
Field
Effect
Transistor
CET

📁 Related Datasheet

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CEM3109 - Dual MOSFET (CET)
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CEM3172 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 8.9A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense.

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CEM3178 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super high .

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CEM3053 - P-Channel MOSFET (CET)
CEM3053 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -15A, RDS(ON) = 7mΩ @VGS = -10V. RDS(ON) = 15mΩ @VGS = -4.5V..

CEM3060 - N-Channel Enhancement Mode Field Effect Transistor (CET)
CEM3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 14A, RDS(ON) = 7.8mΩ @VGS = 10V. RDS(ON) = 11.5mΩ @VGS = 4.5V. Super high den.

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 12A, RDS(ON) = 10.5mΩ @VGS = 10V. RDS(ON) = 15.0mΩ @VGS = 4.5V. Super high dense cell.

CEM3083 - P-Channel MOSFET (CET)
CEM3083 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -13A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 15.5mΩ @VGS = -4..

Stock and price

Baldor Electric Company
AC Motor, C-face, 1.5HP, 3490RPM, 3PH, 60HZ, 143TC, 3518M, OPSB Baldor-Reliance CEM3120T
RS
CEM3120T
0 In Stock
Qty : 1 units
Unit Price : $780.03
No Longer Stocked
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