CEM3252 Datasheet, Transistor, CET

CEM3252 Features

  • Transistor 30V, 7.5A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D 7 D 6 D 5 5 Le

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Part number:

CEM3252

Manufacturer:

CET

File Size:

109.51kb

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📄 Datasheet

Description:

N-channel enhancement mode field effect transistor.

Datasheet Preview: CEM3252 📥 Download PDF (109.51kb)
Page 2 of CEM3252 Page 3 of CEM3252

TAGS

CEM3252
N-Channel
Enhancement
Mode
Field
Effect
Transistor
CET

📁 Related Datasheet

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CEM3259 - Dual Enhancement Mode Field Effect Transistor (CET)
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CEM3032 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
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CEM3053 - P-Channel MOSFET (CET)
CEM3053 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -15A, RDS(ON) = 7mΩ @VGS = -10V. RDS(ON) = 15mΩ @VGS = -4.5V..

CEM3060 - N-Channel Enhancement Mode Field Effect Transistor (CET)
CEM3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 14A, RDS(ON) = 7.8mΩ @VGS = 10V. RDS(ON) = 11.5mΩ @VGS = 4.5V. Super high den.

CEM3082 - N-Channel Enhancement Mode Field Effect Transistor (CET)
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 12A, RDS(ON) = 10.5mΩ @VGS = 10V. RDS(ON) = 15.0mΩ @VGS = 4.5V. Super high dense cell.

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