CEM3258
CET
297.21kb
Dual n-channel enhancement mode field effect transistor.
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CEM3252 - N-Channel Enhancement Mode Field Effect Transistor
(CET)
CEM3252
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 7.5A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. Super high dense.
CEM3252L - N-Channel Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
CEM3252L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 8A, RDS(ON) = 29mΩ @VGS = 10V. RDS(ON) = 36mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @.
CEM3254 - N-Channel MOSFET
(CET)
CEM3254
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V ,7.8A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V.
S.
CEM3254L - N-Channel Enhancement Mode Field Effect Transistor
(CET)
CEM3254L
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 8.0A, RDS(ON) = 25mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. .
CEM3258A - Dual N-Channel MOSFET
(CET)
CEM3258A
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5.
CEM3259 - Dual Enhancement Mode Field Effect Transistor
(CET)
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
CEM3259
5
FEATURES
30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V..
CEM3032 - N-Channel Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
CEM3032
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 18A, RDS(ON) = 4.8mΩ @VGS = 10V. RDS(ON) = 6.8mΩ @VGS = 4.5V.
.
CEM3053 - P-Channel MOSFET
(CET)
CEM3053
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -15A, RDS(ON) = 7mΩ @VGS = -10V. RDS(ON) = 15mΩ @VGS = -4.5V..
CEM3060 - N-Channel Enhancement Mode Field Effect Transistor
(CET)
CEM3060
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 14A, RDS(ON) = 7.8mΩ @VGS = 10V. RDS(ON) = 11.5mΩ @VGS = 4.5V. Super high den.
CEM3082 - N-Channel Enhancement Mode Field Effect Transistor
(CET)
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 12A, RDS(ON) = 10.5mΩ @VGS = 10V. RDS(ON) = 15.0mΩ @VGS = 4.5V. Super high dense cell.