CEM3407L Datasheet, Mosfet, CET

CEM3407L Features

  • Mosfet -30V, -5.1A, RDS(ON) = 48mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. RDS(ON) = 115mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handin

PDF File Details

Part number:

CEM3407L

Manufacturer:

CET

File Size:

544.25kb

Download:

📄 Datasheet

Description:

Dual p-channel mosfet.

Datasheet Preview: CEM3407L 📥 Download PDF (544.25kb)
Page 2 of CEM3407L Page 3 of CEM3407L

TAGS

CEM3407L
Dual
P-Channel
MOSFET
CET

📁 Related Datasheet

CEM3405L - p- (CET)
CEM3405L P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -5.7A, RDS(ON) = 48mΩ @VGS = -10V. RDS(ON) = 62mΩ @VGS = -4..

CEM3032 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM3032 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 18A, RDS(ON) = 4.8mΩ @VGS = 10V. RDS(ON) = 6.8mΩ @VGS = 4.5V. .

CEM3053 - P-Channel MOSFET (CET)
CEM3053 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -15A, RDS(ON) = 7mΩ @VGS = -10V. RDS(ON) = 15mΩ @VGS = -4.5V..

CEM3060 - N-Channel Enhancement Mode Field Effect Transistor (CET)
CEM3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 14A, RDS(ON) = 7.8mΩ @VGS = 10V. RDS(ON) = 11.5mΩ @VGS = 4.5V. Super high den.

CEM3082 - N-Channel Enhancement Mode Field Effect Transistor (CET)
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 12A, RDS(ON) = 10.5mΩ @VGS = 10V. RDS(ON) = 15.0mΩ @VGS = 4.5V. Super high dense cell.

CEM3083 - P-Channel MOSFET (CET)
CEM3083 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -13A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 15.5mΩ @VGS = -4..

CEM3109 - Dual MOSFET (CET)
CEM3109 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 30V, 10A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 20mΩ @VG.

CEM3120 - N-Channel Enhancement Mode Field Effect Transistor (CET)
CEM3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 10A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense .

CEM3128 - Dual N-Channel Enhancement Mode Field Effect Transistor (CET)
CEM3128 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9A, RDS(ON) = 16mΩ @VGS = 10V. RDS(ON) = 23mΩ @VGS = 4.5V. Super high de.

CEM3138 - Dual N-Channel Enhancement Mode Field Effect Transistor (CET)
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9.1A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V. 30V, 6.9A, RDS(ON) .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts